ECCN
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3C005
3C005 High resistivity materials as follows (See List of Items Controlled).
- Category
- Category 3—Electronics
- Product group
- C. “Materials”
Reason for Control
- NS
- AT
Official text
License Requirements
Reason for Control:
NS, AT
Control(s) Country chart(See Supp. No. 1 to part 738)
- NS applies to entire entry NS Column 2.
- AT applies to entire entry AT Column 1.
List Based License Exceptions (See Part 740 for a Description of All License Exceptions)
LVS: $3,000
GBS: Yes
List of Items Controlled
Related Controls: See ECCN 3E001 for related development and production technology, and ECCN 3B991.b.1.b for related production equipment.
Related Definition:
N/A
Items:
a. Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3), or diamond semiconductor “substrates”, or ingots, boules, or other preforms of those materials, having resistivities greater than 10,000 ohm-cm at 20 °C;
b. Polycrystalline “substrates” or polycrystalline ceramic “substrates”, having resistivities greater than 10,000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga2O3), or diamond on the surface of the “substrate”.
ecfr-15cfr774-supp1-2026-08-28 · effective 2026-08-28
Issue date 2026-08-28. Amendment date 2026-08-28.
- eCFR Commerce Control List (15 CFR 774, Supplement No. 1)www.ecfr.gov
- eCFR versioner XML captured at ingestwww.ecfr.gov
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